Impurity-impurity interaction during the growth of UMG-Si-based mc-Si

This article investigates the relationship between chemical composition and electrophysical properties of p- n-type multicrystalline silicon ingots based on metallurgical with a purity 99.99 at.%. In particular, role impurity-impurity interactions in production multisilicon by Bridgman vertical method is evaluated order to identify approaches controlling this process effectively. The phase equilibrium calculations “silicon–all impurities” “silicon-impurity-oxygen” systems were carried out Gibbs energy minimization Selector software package. study rank correlations concentrations various impurities each other, as well specified electrical resistivity (SER) lifetime nonequilibrium charge carriers (NCC) direction crystal growth. Pair element distribution profiles considered main factor represented ratio individual impurity solubilities solid or liquid (k0), from standpoint direct interaction two elements. It was found that k0 value for does not automatically lead pair correlation their ingot. A significant effect k0→0 has binding some part into such form can be incorporated easily growing crystal. Binding may induced melt oxygen background, its segregation at grain boundaries, capture crystallization front inclusion. Significant ingot demonstrated pairs whose elements interact without formation compounds 25–1413 °C temperature range. conducted system revealed possibility forming VB2, TiB2, ZrB2, MgTiO4 phases melt.